BSS308PE optimos? p3 small-signal-transistor features ? p-channel ? enhancement mode ? logic level (4.5v rated) ? esd protected ? qualified according to aec q101 ? 100% lead-free; rohs compliant ? halogen-free according to iec61249-2-21 maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t a =25 c -2.0 a t a =70 c -1.6 pulsed drain current i d,pulse t a =25 c -8.0 avalanche energy, single pulse e as i d =-2 a, r gs =25 -10.7 mj reverse diode d v /d t d v /d t i d =-2 a, v ds =-16v, d i /d t =-200a/s, t j,max =150 c 6 kv/s gate source voltage v gs 20 v power dissipation 1) p tot t a =25 c w operating and storage temperature t j , t stg -55 ... 150 c esd class jesd22-a114 -hbm 2 (2kv to 4kv) soldering temperature 260 c c iec climatic category; din iec 68-1 55/150/56 c value 0.5 pg-sot-23 3 1 type package tape and reel information marking lead free packing BSS308PE pg-sot23 h6327: 3000 pcs/ reel yfs yes non dry 2 v ds - 30 v r ds(on),max v gs =-10 v 80 m v gs =-4.5 v 130 i d -2.0 a product summary product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com
BSS308PE parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - ambient r thja minimal footprint 1) - - 250 k/w electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =-250a -30 - - v gate threshold voltage v gs(th) v ds =v gs , i d =-11a -2.0 -1.5 -1.0 drain-source leakage current i dss v ds =-30v, v gs =0 v, t j =25 c ---1 p a v ds =-30v, v gs =0v, t j =150 c - - -100 gate-source leakage current i gss v gs =-20v, v ds =0v ---5 p a drain-source on-state resistance r ds(on) v gs =-4.5 v, i d =-1.7 a - 88 130 m : v gs =-10 v, i d =-2 a -6280 transconductance g fs | v ds |>2| i d | r ds(on)max , i d =-1.6 a 4.6 - s values 1) performed on 40mm 2 fr4 pcb. the traces are 1mm wide, 70 product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com
BSS308PE parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 376 500 pf output capacitance c oss - 196 261 reverse transfer capacitance c rss -1218 turn-on delay time t d(on) - 5.6 - ns rise time t r - 7.7 - turn-off delay time t d(off) - 15.3 - fall time t f - 2.8 - gate charge characteristics gate to source charge q gs - -1.2 - nc gate to drain charge q gd - -0.6 - gate charge total q g - -5.0 - gate plateau voltage v plateau - -3.1 - v reverse diode diode continous forward current i s - - -0.4 a diode pulse current i s,pulse - - -8.4 diode forward voltage v sd v gs =0 v, i f =-2 a, t j =25 c - -0.8 -1.1 v reverse recovery time t rr -14-ns reverse recovery charge q rr - -5.9 - nc v r =10 v, i f =-2 a, d i f /d t =100 a/s t a =25 c values v gs =0 v, v ds =-15 v, f =1 mhz v dd =-15v, v gs =-10 v, i d =-2 a, r g =6 : v dd =-15 v, i d =-2 a, v gs =0 to -10 v product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com
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